1 | # | PATENT | DESCRIPTION | |
---|---|---|---|---|
2 | 107 | 10,818,674 | Structures and SRAM bit cells integrating complementary field-effect transistors | |
3 | 106 | 10,629,602 | Static random access memory cells with arranged vertical-transport field-effect transistors | |
4 | 105 | 10,497,692 | SRAM structure with alternate gate pitches | |
5 | 104 | 10,439,064 | Dual port vertical transistor memory cell | |
6 | 103 | 10,403,629 | Six-transistor (6T) SRAM cell structure | |
7 | 102 | Method of reducing fin width in FinFet SRAM array to mitigate low voltage strap bit fails | ||
8 | 101 | 10,163,914 | Method of reducing fin width in FinFET SRAM array to mitigate low voltage strap bit fails | |
9 | 100 | 10,109,637 | Cross couple structure for vertical transistors | |
10 | 99 | 10,068,902 | ||
11 | 98 | 10,068,660 | ||
12 | 97 | 9916212 | ||
13 | 96 | 9761594 | Hardmask for a halo/extension implant of a static random access memory (SRAM) layout | |
14 | 95 | 9704600 | Method, apparatus, and system for global healing of write-limited die through bias temperature instability | |
15 | 94 | 9601188 | Method, apparatus and system for targeted healing of stability failures through bias temperature instability | |
16 | 93 | 9601187 | Method, apparatus, and system for global healing of stability-limited die through bias temperature instability | |
17 | 92 | 9564375 | Structures and methods for extraction of device channel width | |
18 | 91 | 9530488 | Methods, apparatus and system determining dual port DC contention margin | |
19 | 90 | 9484300 | Device resulting from printing minimum width semiconductor features at non-minimum pitch | |
20 | 89 | 9372226 | Wafer test structures and methods of providing wafer test structures | |
21 | 88 | 9337204 | Memory Cell | |
22 | 87 | 9263349 | Printing minimum width semiconductor features at non-minimum pitch and resulting device | |
23 | 86 | 9219040 | Integrated circuit with semiconductor fin fuse | |
24 | 85 | 9069922 | Modeling memory cell skew sensitivity | |
25 | 84 | 9048136 | SRAM cell with individual electrical device threshold control | |
26 | 83 | 9029956 | SRAM cell with individual electrical device threshold control | |
27 | 82 | 8947912 | Memory cell including unidirectional gate conductors and contacts | |
28 | 81 | 8907687 | Integrated circuit with stress generator for stressing test devices | |
29 | 80 | 8597994 | Semiconductor device and method of fabrication | |
30 | 79 | 8569116 | Integrated circuit with a fin-based fuse, and related fabrication method | |
31 | 78 | 8563398 | Electrically conductive path forming below barrier oxide layer and integrated circuit | |
32 | 77 | 8099688 | Circuit design | |
33 | 76 | 7989922 | Highly tunable metal-on-semiconductor trench varactor | |
34 | 75 | 7923840 | Electrically conductive path forming below barrier oxide layer and integrated circuit | |
35 | 74 | 7745863 | Flip FERAM cell and method to form same | |
36 | 73 | 7696034 | Methods of base formation in a BiCOMS process | |
37 | 72 | 7679083 | Semiconductor integrated test structures for electron beam inspection of semiconductor wafers | |
38 | 71 | 7466604 | SRAM voltage control for improved operational margins | |
39 | 70 | 7402857 | Flip FERAM cell and method to form same | |
40 | 69 | 7390721 | Methods of base formation in a BiCMOS process | |
41 | 68 | 7313032 | SRAM voltage control for improved operational margins | |
42 | 67 | 7217969 | Flip FERAM cell and method to form same | |
43 | 66 | 7193262 | Low-cost deep trench decoupling capacitor device and process of manufacture | |
44 | 65 | 7190007 | Isolated fully depleted silicon-on-insulator regions by selective etch | |
45 | 64 | 7186573 | Flip FERAM cell and method to form same | |
46 | 63 | 7166904 | Structure and method for local resistor element in integrated circuit technology | |
47 | 62 | 7087486 | Method for scalable, low-cost polysilicon capacitor in a planar DRAM | |
48 | 61 | 7087477 | FinFET SRAM cell using low mobility plane for cell stability and method for forming | |
49 | 60 | 7075153 | Grounded body SOI SRAM cell | |
50 | 59 | 7057180 | Detector for alpha particle or cosmic ray | |
51 | 58 | 7005334 | Zero threshold voltage pFET and method of making same | |
52 | 57 | 6967351 | Finfet SRAM cell using low mobility plane for cell stability and method for forming | |
53 | 56 | 6965133 | Method of base formation in a BiCMOS process | |
54 | 55 | 6962838 | High mobility transistors in SOI and method for forming | |
55 | 54 | 6946376 | Symmetric device with contacts self aligned to gate | |
56 | 53 | 6917221 | Method and apparatus for enhancing the soft error rate immunity of dynamic logic circuits | |
57 | 52 | 6900505 | Method of forming refractory metal contact in an opening, and resulting structure | |
58 | 51 | 6891419 | Methods and apparatus for employing feedback body control in cross-coupled inverters | |
59 | 50 | 6881672 | Selective silicide blocking | |
60 | 49 | 6825530 | Zero Threshold Voltage pFET and method of making same | |
61 | 48 | 6815751 | Structure for scalable, low-cost polysilicon DRAM in a planar capacitor | |
62 | 47 | 6778449 | Method and design for measuring SRAM array leakage macro (ALM) | |
63 | 46 | 6774017 | Method and structures for dual depth oxygen layers in silicon-on-insulator processes | |
64 | 45 | 6762121 | Method of forming refractory metal contact in an opening, and resulting structure | |
65 | 44 | 6700163 | Selective silicide blocking | |
66 | 43 | 6646305 | Grounded body SOI SRAM cell | |
67 | 42 | 6624478 | High mobility transistors in SOI and method for forming | |
68 | 41 | 6624475 | SOI low capacitance body contact | |
69 | 40 | 6614124 | Simple 4T static ram cell for low power CMOS applications | |
70 | 39 | 6555859 | Flip FERAM cell and method to form same | |
71 | 38 | 6515317 | Sidewall charge-coupled device with multiple trenches in multiple wells | |
72 | 37 | 6512296 | Semiconductor structure having heterogenous silicide regions having titanium and molybdenum | |
73 | 36 | 6498096 | Borderless contact to diffusion with respect to gate conductor and methods for fabricating | |
74 | 35 | 6489223 | Angled implant process | |
75 | 34 | 6476445 | Method and structures for dual depth oxygen layers in silicon-on-insulator processes | |
76 | 33 | 6445050 | Symmetric device with contacts self aligned to gate | |
77 | 32 | 6441410 | MOSFET with lateral resistor ballasting | |
78 | 31 | 6420746 | Three device DRAM cell with integrated capacitor and local interconnect | |
79 | 30 | 6395624 | Method for forming implants in semiconductor fabrication | |
80 | 29 | 6387596 | Method of forming resist images by periodic pattern removal | |
81 | 28 | 6380063 | Raised wall isolation device with spacer isolated contacts and the method of so forming | |
82 | 27 | 6368903 | SOI low capacitance body contact | |
83 | 26 | 6338921 | Mask with linewidth compensation and method of making same | |
84 | 25 | 6335272 | Buried butted contact and method for fabricating | |
85 | 24 | 6333202 | Flip FERAM cell and method to form same | |
86 | 23 | 6300228 | Multiple precipitation doping process | |
87 | 22 | 6294419 | Structure and method for improved latch-up using dual depth STI with impurity implant | |
88 | 21 | 6268286 | Method of fabricating MOSFET with lateral resistor with ballasting | |
89 | 20 | 6215190 | Borderless contact to diffusion with respect to gate conductor and methods for fabricating | |
90 | 19 | 6187679 | Low temperature formation of low resistivity titanium silicide | |
91 | 18 | 6187617 | Semiconductor structure having heterogeneous silicide regions and method for forming same | |
92 | 17 | 6153934 | Buried butted contact and method for fabricating | |
93 | 16 | 6144086 | Structure for improved latch-up using dual depth STI with impurity implant | |
94 | 15 | 6140171 | FET device containing a conducting sidewall spacer for local interconnect and method for its fabrication | |
95 | 14 | 6022766 | Semiconductor structure incorporating thin film transistors, and methods for its manufacture | |
96 | 13 | 6008112 | Method for planarized self-aligned floating gate to isolation | |
97 | 12 | 5899713 | Method of making NVRAM cell with planar control gate | |
98 | 11 | 5828131 | Low temperature formation of low resistivity titanium silicide | |
99 | 10 | 5757050 | Field effect transistor having contact layer of transistor gate electrode material | |
100 | 9 | 5744384 | Semiconductor structures which incorporate thin film transistors | |
101 | 8 | 5677563 | Gate stack structure of a field effect transistor | |
102 | 7 | 5675185 | Semiconductor structure incorporating thin film transistors with undoped cap oxide layers | |
103 | 6 | 5672901 | Structure for interconnecting different polysilicon zones on semiconductor substrates for integrated circuits | |
104 | 5 | 5670812 | Field effect transistor having contact layer of transistor gate electrode material | |
105 | 4 | 5510295 | Method for lowering the phase transformation temperature of a metal silicide | |
106 | 3 | 5496771 | Method of making overpass mask/insulator for local interconnects | |
107 | 2 | 5485095 | Fabrication test circuit and method for signalling out-of-spec resistance in integrated circuit structure | |
108 | 1 | 5453400 | Method and structure for interconnecting different polysilicon zones on semiconductor substrates for integrated circuits |